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2008 IEEE International Vacuum Electronics Conference最新文献

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Attenuator for W-band folded waveguide TWT w波段折叠波导行波管衰减器
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556323
Jun Cai, Jinjun Feng, Y. Hu, Xianping Wu, B. Qu, Shaoyun Ma, Juxian Zhang, Tongjiang Chen
{"title":"Attenuator for W-band folded waveguide TWT","authors":"Jun Cai, Jinjun Feng, Y. Hu, Xianping Wu, B. Qu, Shaoyun Ma, Juxian Zhang, Tongjiang Chen","doi":"10.1109/IVELEC.2008.4556323","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556323","url":null,"abstract":"Attenuators for W-band folded waveguide TWT have been successfully fabricated using BeO and Al2O3 respectively. And these samples could meet the strict dimension requirements based on former design after repetitious attempts. Test system of attenuator was developed to test them, and test results showed good performance that can meet the practical requirements in W-band folded waveguide TWT.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124814944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
In situ emission microscopy of scandium/scandium oxide and barium/barium oxide thin films on tungsten 钨上钪/氧化钪和钡/氧化钡薄膜的原位发射显微镜研究
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556423
J. Vaughn, M. Kordesch
{"title":"In situ emission microscopy of scandium/scandium oxide and barium/barium oxide thin films on tungsten","authors":"J. Vaughn, M. Kordesch","doi":"10.1109/IVELEC.2008.4556423","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556423","url":null,"abstract":"The effect of a thin Sc/Sc Oxide base layer on Ba/Ba Oxide surface diffusion, adsorption and desorption on W is studied using photoelectron emission microcopy (PEEM) and thermionic emission microscopy (ThEEM).","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121991770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Local interaction impedance of periodic slow-wave systems 周期慢波系统的局部相互作用阻抗
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556477
S. Mukhin, D. Nikonov, V. A. Solntsev
{"title":"Local interaction impedance of periodic slow-wave systems","authors":"S. Mukhin, D. Nikonov, V. A. Solntsev","doi":"10.1109/IVELEC.2008.4556477","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556477","url":null,"abstract":"Local interaction impedance was taken into account for analysis and simulation of TWTs with periodic SWS instead of usual interaction impedance, and it characterizes electromagnetic field in interaction gaps and is a continuous frequency function in SWS passbands and stopbands.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131885112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Space traveling wave tube amplifiers with on-orbit flexible saturated output power 具有在轨柔性饱和输出功率的空间行波管放大器
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556439
T. Phelps, J. McDowell, W. Menninger
{"title":"Space traveling wave tube amplifiers with on-orbit flexible saturated output power","authors":"T. Phelps, J. McDowell, W. Menninger","doi":"10.1109/IVELEC.2008.4556439","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556439","url":null,"abstract":"This paper describes several approaches to achieving adjustable power output from a traveling wave tube amplifier. It can be adjusted in flight for maximum flexibility in matching the amplifier capability to the applicationpsilas need. The efficiency can be maximized without changing the hardware.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth mechanism and field emission properties of inject-like ZnO nanostructure 注射状ZnO纳米结构的生长机理及场发射性能
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556550
Xiaxi Yang, Xiaobing Zhang, W. Lei, Baoping Wang, Chi Li
{"title":"Growth mechanism and field emission properties of inject-like ZnO nanostructure","authors":"Xiaxi Yang, Xiaobing Zhang, W. Lei, Baoping Wang, Chi Li","doi":"10.1109/IVELEC.2008.4556550","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556550","url":null,"abstract":"We report the fabrication process of injector-like ZnO nanostructures and their excellent field emission properties. Injector-like Zinc oxide (ZnO) nanostructures were synthesized on a Si (001) substrate with ~5 nm thick gold film by direct thermal evaporation of Zinc power under a low temperature of 600 degC and normal pressure. Field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) were applied to study the structural characteristics and optical properties of the product.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 500kW C-Band broadband klystron 500kW c波段宽带速调管
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556339
Liu Xiu, Zhang Yi-lin, Wang Yu-hong, Tao Yong-jian, Wang Qing, Wang Jie, Zuo Xiang-hua, Dou Yue, Luo Fang
{"title":"A 500kW C-Band broadband klystron","authors":"Liu Xiu, Zhang Yi-lin, Wang Yu-hong, Tao Yong-jian, Wang Qing, Wang Jie, Zuo Xiang-hua, Dou Yue, Luo Fang","doi":"10.1109/IVELEC.2008.4556339","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556339","url":null,"abstract":"A 500 kW C-band klystron with broad bandwidth has been developed. The klystron is successfully built and met design specification and applied for microwave amplifier.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"297 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133746011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices 用于完全集成的片上真空电子器件的高压MEMS平台
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556325
S. Natarajan, C. Parker, J. Glass, C. Bower, K. Gilchrist, J. Piascik, B. Stoner
{"title":"High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices","authors":"S. Natarajan, C. Parker, J. Glass, C. Bower, K. Gilchrist, J. Piascik, B. Stoner","doi":"10.1109/IVELEC.2008.4556325","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556325","url":null,"abstract":"We demonstrate a fully integrated, on-chip, vacuum microtriode capable of handling voltages up to 800 V. The ability to operate at such high voltages is achieved by the addition of a 10 mum-thick silicon dioxide layer to the device. The device is fabricated using MEMS fabrication principles and utilizes carbon nanotubes as field emitters. A dc amplification factor of 600 was obtained. To the best of our knowledge, this is the highest value reported for CNT-enabled microtriode devices. The high voltage capability of these microscale devices will enable their use in a wider variety of applications such as miniature ion sources and x-ray sources.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An analytical formula of the wave group velocity in the coupled cavity chain 耦合空腔链中波群速度的解析公式
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556442
A. V. Konnov
{"title":"An analytical formula of the wave group velocity in the coupled cavity chain","authors":"A. V. Konnov","doi":"10.1109/IVELEC.2008.4556442","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556442","url":null,"abstract":"In this presentation an analytical formula for the group velocity in the coupled cavity slow wave structure (CCSWS) being simulated by two band network is derived.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114232348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of high current density sheet beam electron gun for Terahertz devices 太赫兹器件用大电流密度片束电子枪的研制
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556328
A. Srivastava, J. So, G. Park, R. S. Raju, Y. Wang, J. Wang
{"title":"Development of high current density sheet beam electron gun for Terahertz devices","authors":"A. Srivastava, J. So, G. Park, R. S. Raju, Y. Wang, J. Wang","doi":"10.1109/IVELEC.2008.4556328","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556328","url":null,"abstract":"The development of high current density sheet beam electron gun for Terahertz devices is carried-out. It operates at beam voltage of 12 kV and perveance 0.0136 mup to meet ours requirement of high beam current density 100 A/cm2 and low emittance 0.068 pi-mm-mrad at the beam-waist position. Currently, mentioned gun is being fabricated. Work has been initiated to test the performance of Scandate cathode using anode-aperture mapping. Current density of 50 A/cm2 has been ensured across the beam cross-section of 100 times 600 mum2.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115095225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experiment on TWT 3IM suppression using harmonic and IM3 injection 谐波和注入IM3抑制行波管3IM的实验
2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI: 10.1109/IVELEC.2008.4556474
Li Li, Jinjun Feng, Shaolun Cai, Xiaofeng Liang
{"title":"Experiment on TWT 3IM suppression using harmonic and IM3 injection","authors":"Li Li, Jinjun Feng, Shaolun Cai, Xiaofeng Liang","doi":"10.1109/IVELEC.2008.4556474","DOIUrl":"https://doi.org/10.1109/IVELEC.2008.4556474","url":null,"abstract":"In this paper, both second harmonic and third order inter-modulation signals are experimentally injected into a traveling wave tube (TWT) to carry out the research on the suppression of IM3 in a X-band TWT. The results shows that with proper phase and amplitude of injected 2f<sub>2</sub> and 2f<sub>2</sub> - f<sub>1</sub>, a significant reduction in the upper IM3 (2f<sub>2</sub> - f<sub>1</sub>) is observed. IM3 suppression of up to 30.67 dB is examined with 2f<sub>2</sub> injection when Df = f<sub>1</sub>- f<sub>2</sub> = 5MHz, and 15.75 dB IM3 suppression is obtained with IM3 (2f<sub>2</sub> - f<sub>1</sub>) injection.","PeriodicalId":113971,"journal":{"name":"2008 IEEE International Vacuum Electronics Conference","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114795637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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