2014 26th International Conference on Microelectronics (ICM)最新文献_第6页

Quasi seven-level operation of multilevel converters with selective harmonic elimination 具有选择性谐波消除的多电平变换器的准七电平运行

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071845

M. G. Fakhry, A. Massoud, S. Ahmed

{"title":"Quasi seven-level operation of multilevel converters with selective harmonic elimination","authors":"M. G. Fakhry, A. Massoud, S. Ahmed","doi":"10.1109/ICM.2014.7071845","DOIUrl":"https://doi.org/10.1109/ICM.2014.7071845","url":null,"abstract":"Generally, selective harmonic elimination (SHE) complexity for multilevel inverters increases with the increase in number of levels. In this paper, a novel approach for SHE is introduced. This approach is based on cancelling the 5th and 7th order harmonics irrelevant of the number of levels in three-phase multilevel converters, such that the solution for the angles required for the proposed SHE mimics that of the seven-level inverter (i.e. quasi seven-level operation of an n-level converter). The advantages of the proposed SHE approach are the simplicity in format and independency of number of levels. The proposed approach can be extended for more of low order harmonic cancellation. A method to obtain initial values for the SHE equations according to the reference modulation index M is proposed and investigated thoroughly. Compared with existing methods, the proposed method does not involve complex equation groups and is easier to be utilized in the case of a large number of switching angles, or multiple switching angles per voltage level in multilevel inverters. A 17-level cascaded inverter with different modulation indices working in Quasi Seven-Level Operation is considered as an example to validate the proposed concept. Simulations using MATLAB/SIMULINK platform has been conducted to validate the proposed concept.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132639298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

A multi-sensing reconfigurable platform for gas applications 用于气体应用的多传感可重构平台

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071828

M. Akbar, Amine Ait Si Ali, A. Amira, M. Benammar, F. Bensaali, Saqib Mohamad, Fang Tang, A. Bermak, Mohamed Zgaren, M. Sawan

引用次数: 4

High performance charge plasma based multi zone lateral bipolar junction transistor 基于高性能电荷等离子体的多区横向双极结晶体管

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071796

S. Loan, F. Bashir, M. Rafat, S. A. Abbasi, A. Alamoud

{"title":"High performance charge plasma based multi zone lateral bipolar junction transistor","authors":"S. Loan, F. Bashir, M. Rafat, S. A. Abbasi, A. Alamoud","doi":"10.1109/ICM.2014.7071796","DOIUrl":"https://doi.org/10.1109/ICM.2014.7071796","url":null,"abstract":"In this paper, we propose a new structure of a lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI), employing multi zone collector drift region. The novelty of the device is the use of charge plasma concept to realize emitter, base and multi zone collector drift regions. Here metals of different work functions are used to realize these regions instead of conventional doping methods of diffusion and ion implantation. The numerical simulation of the proposed multi zone charge plasma LBJT (MZCP-LBJT) on SOI has been performed and the key characteristics have been compared with the conventionally doped LBJT (CD-LBJT) on SOI. A significant improvement in the ON current (ION), current gain, cutoff frequency (fT) and breakdown voltage has been observed in the proposed device. It has been observed that current gain increases by ~ 20 times and ION by 10 times in the proposed device. Further, by using an optimized gap between the collector and base regions, a 34% increase in fT is achieved in the proposed device. Furthermore, the proposed device does not face doping related issues and the requirement of high temperature processing is absent, as it uses charge plasma concept to realize different regions, instead of the conventional doping methods.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134440280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Haralick features for GEI-based human gait recognition 基于gei的人类步态识别的Haralick特征

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071800

Ait O. Lishani, L. Boubchir, A. Bouridane

引用次数: 15

A 0.6-V/1.2-V low power single ended CMOS LNA for multi-standard RF front-ends 用于多标准射频前端的0.6 v /1.2 v低功耗单端CMOS LNA

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071808

A. Slimane, Sid-Ahmed Tedjini-Bailiche, A. Taibi, M. Belaroussi, D. Maafri

引用次数: 5

Automatic mapping of AF3 specifications to ARM cortex-M based FRDM platfrom AF3规范自动映射到基于ARM cortex-M的FRDM平台

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071849

Mohammadhossein Askarihemmat, O. Mohamed, M. Boukadoum

引用次数: 1

Agile hierarchical cluster structure-based cooperative spectrum sensing in cognitive radio networks 基于敏捷层次聚类结构的认知无线电网络协同频谱感知

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071803

Faroq A. Awin, E. Abdel-Raheem, M. Ahmadi

引用次数: 7

Improved gait recognition based on gait energy images 基于步态能量图像的改进步态识别

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071801

Imad Rida, Somaya Almaadeed, A. Bouridane

引用次数: 13

A 4-bit 6GS/s time-based analog-to-digital converter 一个4位6GS/s基于时间的模数转换器

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-12-01 DOI: 10.1109/ICM.2014.7071814

Assem Hussein, Mahmoud Fawzy, M. Ismail, Mohamed Refky, H. Mostafa

引用次数: 3

Efficient relocation of variable-sized hardware tasks for FPGA-based adaptive systems 基于fpga的自适应系统中可变大小硬件任务的有效重定位

2014 26th International Conference on Microelectronics (ICM) Pub Date : 2014-10-14 DOI: 10.1109/ICM.2014.7071847

M. Hannachi, H. Rabah, S. Jovanovic, A. B. Abdelali, A. Mtibaa

引用次数: 5