Ioannis E. Fragkos, Chee-Keong Tan, V. Dierolf, Y. Fujiwara, N. Tansu
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Abstract
A current injection efficiency model is developed to identify and understand the limiting factors of the internal quantum efficiency in the GaN:Eu based red LEDs. Through this model the design and fabrication of high efficiency GaN:Eu devices in the red spectra regime is feasible.
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