Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm

Jiho Joo, Sanghoon Kim, I. Kim, Ki-seok Jang, Gyungock Kim
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引用次数: 7

Abstract

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.
λ ~ 1.55µm高响应垂直照明型锗硅光电探测器的研究进展
我们提出了一种垂直照明型100% Ge-on-Si光电探测器,在λ ~ 1.55µm下的响应度高达0.93 a /W。采用直径60µm器件的10Gbps光接收器在λ∜1.55µm下具有−19.5 dBm的高灵敏度。
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