Terahertz electrooptic modulation of a single biased GaAs quantum well

V. Ciulin, S. Carter, M. Sherwin, A. Huntington, L. Coldren, A. Maslov, D. Citrin
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Abstract

We investigate the optical interband properties of GaAs quantum wells driven by a terahertz field. The application of this field shifts the exciton absorption energy. Additionally, terahertz optical sidebands are observed up to 140 K.
单偏置砷化镓量子阱的太赫兹电光调制
研究了在太赫兹场驱动下GaAs量子阱的带间光学特性。该场的应用使激子的吸收能发生位移。此外,在140 K的温度下,可以观察到太赫兹光学边带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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