Highly efficient edge terminations for diamond schottky diodes

IF 0.1 0 THEATER

Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558789

M. Brezeanu, S. J. Rashid, T. Butler, N. Rupesinghe, F. Udrea, A. Garraway, L. Coubeck, P. Taylor, G. Amaratunga, D. Twitchen, A. Tajani, M. Dixon

引用次数: 2

Abstract

Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported

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金刚石肖特基二极管的高效边端

本文提出了两种适用于金刚石肖特基二极管的端接结构。两种结构之间的彻底比较，涉及电气和几何方面，包括。该研究基于理论模型和广泛的数值结果。据报道，终端效率高达93%

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Teatro e Storia THEATER-

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