Study the Doping Effect of Lead(Pb) on the Optical Properties of Cadmium Sulfide (CdS) Thin Films.

Abdul-Majeed E.Ibrahim, Raid A.Ismail, Wattban N. Nada
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Abstract

The optical properties of pure and doped  Cadmium Sulfide thin films have been stadied  in  the present work. Cadimum Sulfide can be doped by the Lead of (5%,10%,15%,20%) which prepared by chemical spray pyrolysis technique were deposited on (350ºC) glass substrates. The optical properties– Trasmittance (T), Absorbtance (A), Energy band gap (Eg), Absorption coefficient(α) and Extinction Coefficient (ko) - within wave length range (330-1100)nm. The cadmium sulfide (pure) thin flims were found to exhibit hight trnsmittance abute (82-86)%, the transmittance decreases with the increasing the doped ratio by the lead(Pb).The direct band gap energy of films decreases from (2.40eV) for the pure thin films to (2.35,2.31,2.25,2.19 eV) for  the doped by lead at (5%,10%,15%,20%).
研究铅(Pb)掺杂对硫化镉(cd)薄膜光学性能的影响。
本文研究了纯硫化镉和掺杂硫化镉薄膜的光学性质。将化学喷雾热解法制备的硫化镉分别掺杂(5%、10%、15%、20%)于(350℃)玻璃基片上。在波长范围(330 ~ 1100)nm范围内的光学性质-透射率(T)、吸光度(A)、能带隙(Eg)、吸收系数(α)和消光系数(ko)。硫化镉(纯)薄膜的透光率约为(82 ~ 86)%,随铅(Pb)掺量的增加透光率降低。在(5%、10%、15%、20%)掺杂的情况下,薄膜的直接带隙能从纯薄膜的(2.40eV)下降到(2.35、2.31、2.25、2.19 eV)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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