S. Hibino, T. Nishimura, K. Nagashio, K. Kita, A. Toriumi
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Abstract
This paper presents experimental results of the counter dipole formation in SiO2/high-k (Al2O3 and Y2O3)/SiO2/Si gate stacks for the first time. The results definitely support the high-k/SiO2 interface dipole layer formation in metal/high-k gate CMOS.
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