Ultrafast control of moiré pseudo‐electromagnetic field in homobilayer semiconductors

IF 2.6 Q2 MULTIDISCIPLINARY SCIENCES
D. Zhai, W. Yao
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引用次数: 2

Abstract

In long-wavelength moir´e patterns of homobilayer semiconductors, the layer pseudospin of elec-trons is subject to a sizable Zeeman field that is spatially modulated from the interlayer coupling in moir´e. By interference of this spatial modulation with a homogeneous but dynamically tunable component from out-of-plane electric field, we show that the spatial-temporal profile of the overall Zeeman field therefore features a topological texture that can be controlled in an ultrafast timescale by a terahertz field or an interlayer bias. Such dynamical modulation leads to the emergence of an in-plane electric field for low energy carriers, which is related to their real space Berry curvature – the moir´e magnetic field – through the Faraday’s law of induction. These emergent electromagnetic fields, having opposite signs at the time reversal pair of valleys, can be exploited to manipulate valley and spin in the moir´e landscape under the control by a bias pulse or a terahertz irradiation.

Abstract Image

均匀层半导体中moir伪电磁场的超快控制
在均层半导体的长波长莫尔e模式中,电子的层伪自旋受到一个相当大的塞曼场的影响,该场是由莫尔e中的层间耦合在空间上调制的。通过这种空间调制与来自面外电场的均匀但可动态调谐的分量的干扰,我们表明整个塞曼场的时空轮廓因此具有拓扑结构,可以通过太赫兹场或层间偏压在超快时间尺度上进行控制。这种动态调制导致低能载流子的面内电场的出现,该电场通过法拉第感应定律与它们的实际空间Berry曲率-莫尔磁场有关。这些涌现的电磁场,在时间反转的谷对上具有相反的符号,可以在偏置脉冲或太赫兹辐射的控制下,在莫尔e景观中操纵谷和自旋。
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