The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact

Abstract

The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.