Temperature-dependent photoluminescence of a dot-in-a-rod nanowire emitting at 1310nm

M. Dhouibi, S. Haffouz, J. Jin, L. Giner, K. Mnaymneh, P. Poole, D. Dalacu, A. Kalboussi, R.L. Williams
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Abstract

We report on temperature-dependent photoluminescence properties of a single $\mathbf{In} \mathbf{A s}_{\mathbf{x}} \mathbf{P}_{1-\mathbf{x}} / \mathbf{In} \mathbf{A s} \mathbf{y} \mathbf{P}_{1-\mathbf{y}}$ quantum dot-in-a-rod (DROD) nanowire emitting at 1310 nm. We will discuss the variation of the emission intensity, linewidth, peak energy and decay time of the exciton peak as a function of the temperature in the 4 - 120 K range. Strong emission from the DROD nanowire at 300 K is also observed. A relative quantum yield of about 61 % is measured at room temperature.
1310nm发射的点在棒纳米线的温度依赖性光致发光
我们报道了单个$\mathbf{In} \mathbf{a s}_{\mathbf{x}} \mathbf{P} {1-\mathbf{x}} / \mathbf{In} \mathbf{a s} \mathbf{y} \mathbf{P}} {1-\mathbf{y}}$量子点在棒(DROD)纳米线在1310 nm发射的温度依赖光致发光特性。我们将讨论在4 - 120 K范围内激子峰的发射强度、线宽、峰值能量和衰减时间随温度的变化。在300k时,还观察到DROD纳米线的强发射。在室温下测得相对量子产率约为61%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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