Near-White Light and Near-Infrared Luminescence in Perovskite Ga:LaCrO 3

T. Rajalekshmi, V. Mishra, Tejendra Dixit, M. Miryala, M. S. Ramachandra Rao, K. Sethupathi
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引用次数: 2

Abstract

We report the realization of near-white light emission (near-WLE) and the selective tuning to the near-infrared (NIR) luminescence from Ga substituted lanthanum chromite perovskite with electron-beam excitation. The Ga3+ acts as an electron donor in the LaCrO3 system and the emission intensity increases with Ga substitution. The near-WLE in CL, arises from the combination of 4T1(F)→4A2 (blue), 4T1(P)→4A2 (green) and 4T2→4A2 (red) spin allowed transitions and 2E→4A2 spin forbidden transitions from the Cr3+ ion. The spin allowed transitions from the Cr3+ ions are not common, however can be accomplished by adjusting the Cr3+/Ga3+ ion concentration in the host lattice. The NIR emission originates from the selective 2E→4A2 transition, which dominates with the increasing concentration of Ga3+ ions. The Density Functional Theory (DFT) calculations point out the presence of extra electronic states with Ga substitution, which validates the observation of NIR emission in Ga substituted samples.
钙钛矿Ga:LaCrO 3的近白光和近红外发光
本文报道了用电子束激发的方法,实现了镓取代镧铬铁矿钙钛矿的近白光发射和近红外(NIR)选择性调谐。在LaCrO3体系中,Ga3+作为电子给体,随着Ga的取代,发射强度增加。CL中的近wle是由Cr3+离子的4T1(F)→4A2(蓝色)、4T1(P)→4A2(绿色)和4T2→4A2(红色)自旋允许跃迁和2E→4A2自旋禁止跃迁共同引起的。自旋允许的Cr3+离子跃迁并不常见,但可以通过调节主晶格中的Cr3+/Ga3+离子浓度来实现。近红外发射源于选择性的2E→4A2跃迁,随着Ga3+离子浓度的增加,这种跃迁占主导地位。密度泛函理论(DFT)计算指出了Ga取代的额外电子态的存在,验证了Ga取代样品近红外发射的观察结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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