X-ray production of vacancies in pure and doped KC1 at 4.2°K

A. Behr , W. Waidelich
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引用次数: 7

Abstract

The production of α- and F -centers by X-rays in KC1 of different dislocation densities and impurities at 4.2°K is studied. The concentration of the vacancies generated at 4.2°K is constant.

纯KC1和掺杂KC1在4.2°K下的x射线空位产生
研究了在4.2°K下,x射线在不同位错密度和杂质的KC1中产生α-中心和F -中心。在4.2°K时产生的空位浓度是恒定的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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