Strong Dephasing in a Laser Excited Semiconductor Due to Carrier-Plasmon Scattering

G. Mauzke, U. Moldzio, K. Henneberger
{"title":"Strong Dephasing in a Laser Excited Semiconductor Due to Carrier-Plasmon Scattering","authors":"G. Mauzke, U. Moldzio, K. Henneberger","doi":"10.1109/EQEC.1996.561531","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11780,"journal":{"name":"EQEC'96. 1996 European Quantum Electronic Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EQEC'96. 1996 European Quantum Electronic Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EQEC.1996.561531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
激光激发半导体中由载流子-等离子体散射引起的强消相
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信