A concurrent dual-band low noise amplifier with gain enhancement topology for 2.4/5.2 GHz applications

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-12-06 DOI:10.33180/infmidem2022.102

Chun Wei, Ronghua Zhang, Zhiying Xia, Kui Cheng, Xinyu Liu1, Weijun Luo

引用次数: 0

Abstract

: This paper presents a dual-band low-noise amplifier (LNA)operating at 2.4/5.2 GHz for wireless local area network (WLAN) applications. The LC parallel resonance and LC series network are adopted to achieve input impedance matching and noise matching simultaneously at dual-band. Besides, a small-size capacitor with a coupled inductor is added for gain-enhancement. The simulation results show that the LNA has gains(S21) of 17.1 dB and 8.5 dB with a noise figure of 3.6 dB and 3.3 dB at 2.4 GHz and 5.2 GHz, and input return loss(S11) of -15.6 dB and -13.8 dB while output return loss(S22) of -11.7 dB and -20.7 dB at two operating frequencies, respectively. Therefore, the proposed LNA structure is an attractive alternative to WLAN applications.

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一种具有增益增强拓扑的并发双频低噪声放大器，适用于2.4/5.2 GHz应用

本文提出了一种工作频率为2.4/5.2 GHz的双频低噪声放大器(LNA)，用于无线局域网(WLAN)应用。采用LC并联谐振和LC串联网络，在双频段同时实现输入阻抗匹配和噪声匹配。此外，还增加了一个带有耦合电感的小尺寸电容器以增强增益。仿真结果表明，该LNA在2.4 GHz和5.2 GHz频段的增益(S21)分别为17.1 dB和8.5 dB，噪声系数分别为3.6 dB和3.3 dB，两个工作频率下的输入回波损耗(S11)分别为-15.6 dB和-13.8 dB，输出回波损耗(S22)分别为-11.7 dB和-20.7 dB。因此，所提出的LNA结构是WLAN应用的一个有吸引力的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Informacije Midem-Journal of Microelectronics Electronic Components and Materials 工程技术-材料科学：综合

CiteScore

1.80

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Informacije MIDEM publishes original research papers in the fields of microelectronics, electronic components and materials. Review papers are published upon invitation only. Scientific novelty and potential interest for a wider spectrum of readers is desired. Authors are encouraged to provide as much detail as possible for others to be able to replicate their results. Therefore, there is no page limit, provided that the text is concise and comprehensive, and any data that does not fit within a classical manuscript can be added as supplementary material. Topics of interest include: Microelectronics, Semiconductor devices, Nanotechnology, Electronic circuits and devices, Electronic sensors and actuators, Microelectromechanical systems (MEMS), Medical electronics, Bioelectronics, Power electronics, Embedded system electronics, System control electronics, Signal processing, Microwave and millimetre-wave techniques, Wireless and optical communications, Antenna technology, Optoelectronics, Photovoltaics, Ceramic materials for electronic devices, Thick and thin film materials for electronic devices.