Zero Power X-cut LiNbO3 MEMS-based Radio Frequency Rectifier

L. Colombo, Giuseppe Michetti, Michele Pirro, C. Cassella, G. Piazza, M. Rinaldi
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引用次数: 2

Abstract

This paper reports the first demonstration of a passive rectifier boosted by means of a microelectromechanical (MEM) X-cut Lithium Niobate (LN) Laterally Vibrating Resonator (LVR). A high-performance device operating around 110 MHz, exhibiting a loaded quality factor ($Q_{s}$) of 4,000 and showing an electromechanical coupling ($k_{t}^{2}$) of 29% is coupled to a commercial diode to provide a large passive voltage amplification of the RF driving signal. We show that the implementation of this device significantly increases the rectified DC voltage probed at the output of the rectifier. Voltage gains as high as 22 dB (13 V/V) are reported. The resonator demonstrated a 13 dB gain improvement compared to a high quality factor ($Q=50$) inductor implemented in the same system.
零功率X-cut LiNbO3 mems射频整流器
本文报道了利用微机电(MEM) x切割铌酸锂(LN)横向振动谐振器(LVR)推进的无源整流器的首次演示。一个工作在110 MHz左右的高性能器件,显示负载质量因子($Q_{s}$)为4,000,机电耦合($k_{t}^{2}$)为29%,耦合到商用二极管,以提供射频驱动信号的大无源电压放大。我们表明,该装置的实施显著提高整流器输出端探测到的整流直流电压。电压增益高达22 dB (13 V/V)。与同一系统中实现的高质量因数(Q=50)电感器相比,该谐振器的增益提高了13 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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