Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/

Abstract

Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.