Silicon CMOS-transistor-based detection up to 4.25 THz

Abstract

We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.