A high efficiency, high voltage, balanced cascode FET

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1516694

A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda

引用次数: 8

Abstract

A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.

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一种高效率、高电压、平衡级联场效应管

提出了一种高效率、高工作电压的GaAs HFET。提出了一种无射频反馈的平衡级联电路，该电路在2.1GHz时可达到78.2%的高PAE。对平衡电容器的优化进行了理论分析和实验验证。这一结果有助于用低击穿电压晶体管设计高压功率放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

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