Design of a 49-GHz AlSb/InAs HEMT monolithic grid oscillator

2003 IEEE Topical Conference on Wireless Communication Technology Pub Date : 2003-10-15 DOI:10.1109/WCT.2003.1321475

C. Song, W. Shiroma, R. Tsai, K. Padmanabhan, B. Bayuk, A. Gutierrez-Aitken

引用次数: 0

Abstract

An AlSb/InAs HEMT monolithic grid oscillator is designed using full-wave electromagnetic techniques. Simulations predict an oscillation frequency of 49 GHz with a loop gain of 1.4, which is within 10% of the loop gain corresponding to optimum feedback.

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49 ghz AlSb/InAs HEMT单片栅格振荡器的设计

采用全波电磁技术设计了AlSb/InAs HEMT单片栅格振荡器。仿真预测振荡频率为49 GHz，环路增益为1.4，在最佳反馈对应的环路增益的10%以内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 IEEE Topical Conference on Wireless Communication Technology

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