Observation of Quantum Confined Stark Effect in Strain Compensated GaInAsSb/AlGaAsSb Multiple Quantum Well Structures

IF 1 Q4 QUANTUM SCIENCE & TECHNOLOGY
Yan Shi, Jian H. Zhao, J. Sarathy, G. Olsen, Hao Lee
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引用次数: 0

Abstract

The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.
应变补偿GaInAsSb/AlGaAsSb多量子阱结构中量子受限Stark效应的观察
在许多不同材料体系的量子阱结构中,如GaAs/AlGaAs[1]-[3]和InGaAs/InP[4],已经观察到量子受限Stark效应(QCSE)。由于吸收边缘的急剧上升,加上非常高的激子共振峰,以及它随外加电场的位移,QCSE在光电子学中有许多应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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