Integration of optical and electronic interconnections on silicon

S. Lazarouk, A. Leshok, P. Katsuba, V. Borisenko
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引用次数: 1

Abstract

The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.
在硅上集成光学和电子互连
研究了硅基集成光电互连的设计与制造技术。所提出的发光二极管是基于氧化铝基体中的纳米结构硅。制作了电流变换系数约为1%的光偶。与现有的类似设计相比较,表明了所开发设计的优点。
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