A 76dBΩ 1.7GHz 0.18µm CMOS tunable transimpedance amplifier using broadband current pre-amplifier for high frequency lateral micromechanical oscillators

2010 IEEE International Solid-State Circuits Conference - (ISSCC) Pub Date : 2010-03-18 DOI:10.1109/ISSCC.2010.5433902

H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi

{"title":"A 76dBΩ 1.7GHz 0.18µm CMOS tunable transimpedance amplifier using broadband current pre-amplifier for high frequency lateral micromechanical oscillators","authors":"H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi","doi":"10.1109/ISSCC.2010.5433902","DOIUrl":null,"url":null,"abstract":"The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"32 2","pages":"318-319"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5433902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 25

Abstract

The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].

查看原文本刊更多论文

一种76dBΩ 1.7GHz 0.18µm CMOS可调跨阻放大器，采用宽带电流前置放大器，用于高频横向微机械振荡器

参考频率振荡器是现代无线电收发器的关键器件。目前，现代收发器依赖于片外低频(≪100MHz)石英晶体参考振荡器[1]。硅微机械振荡器是石英晶体振荡器的合适替代品，因为它们体积小，频率高，与ic集成的潜力[2]-[4]。在多千兆赫应用中，大的上转换比限制了射频前端的性能。此外，基于ofdm的3G/4G标准具有严格的误差矢量幅度(EVM)规范[5]，要求低相位噪声底限，对于低频谐振槽，只有通过减少锁相环中低通滤波器的3db带宽(BW)才能实现。小的BW增加了滤波器的尺寸，因此，使合成器在单个芯片中的集成变得复杂。然而，最近微加工技术的进步使得后cmos兼容超高频微机械振荡器的实现成为可能[3]，[4]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2010 IEEE International Solid-State Circuits Conference - (ISSCC)

自引率

0.00%

发文量