The Silicon:Colloidal Quantum Dot Heterojunction

IF 27.4 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Materials Pub Date : 2015-10-13 DOI:10.1002/adma.201503212

Silvia Masala, Valerio Adinolfi, Jon-Paul Sun, Silvano Del Gobbo, Oleksandr Voznyy, Illan J. Kramer, Ian G. Hill, Edward H. Sargent

引用次数: 51

Abstract

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.

Abstract Image

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硅:胶体量子点异质结

实现了晶体硅与胶体量子点(CQDs)之间的异质结。为了克服两种半导体之间固有的能带不匹配，开发了一种特殊的界面修饰，实现了对CQD薄膜中产生的红外光载流子的有效收集。这个结被用来制造一个灵敏的近红外光电探测器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Materials 工程技术-材料科学：综合

CiteScore

43.00

自引率

4.10%

发文量

2182

审稿时长

2 months

期刊介绍： Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.