La-doped BaSnO3 for electromagnetic shielding transparent conductors

IF 13.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nano Convergence Pub Date : 2023-10-28 DOI:10.1186/s40580-023-00397-z

Jingyeong Jeon, Youngkyoung Ha, Judith L. MacManus-Driscoll, Shinbuhm Lee

{"title":"La-doped BaSnO3 for electromagnetic shielding transparent conductors","authors":"Jingyeong Jeon, Youngkyoung Ha, Judith L. MacManus-Driscoll, Shinbuhm Lee","doi":"10.1186/s40580-023-00397-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we find that La-doped BaSnO<sub>3</sub> (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl<sub>2</sub>O<sub>4</sub> substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl<sub>2</sub>O<sub>4</sub>. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5–20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ <sup>−1</sup>, high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In<sub>2</sub>O<sub>3</sub> and SrMoO<sub>3</sub>.</p><h3>Graphical Abstract</h3>\n <div><figure><div><div><picture><source><img></source></picture></div></div></figure></div>\n </div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"10 1","pages":""},"PeriodicalIF":13.4000,"publicationDate":"2023-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10613181/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Convergence","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1186/s40580-023-00397-z","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

In this work, we find that La-doped BaSnO₃ (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl₂O₄ substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl₂O₄. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5–20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ ⁻¹, high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In₂O₃ and SrMoO₃.

Graphical Abstract

Abstract Image

查看原文本刊更多论文

La掺杂的BaSnO3，用于电磁屏蔽透明导体。

在这项工作中，我们发现掺La的BaSnO3（BLSO）是一种很有前途的电磁屏蔽透明导体。虽然在工业实用的光电子MgAl2O4衬底上生长的薄膜的薄层电阻比以前的报道高出三个数量级，但我们展示了如何通过使用MgO模板层来恢复接近单晶水平的薄层电阻，该模板层能够在（001）MgAl2O 4上生长高质量的（001）取向BLSO外延薄膜。结晶度与电导率呈正相关；高结晶度使自由电子的散射最小化。通过将该设计原理应用于5-20%掺杂的薄膜，我们发现高度结晶的5%La掺杂的BLSO薄膜表现出低的薄层电阻 ~ 8.7Ω▯ -1、可见光透过率高 ~ 80%，高X波段电磁屏蔽效能 ~ 25.9dB，因此优于Sn掺杂的In2O3和SrMoO3的透明导电氧化物膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Convergence Engineering-General Engineering

CiteScore

15.90

自引率

2.60%

发文量

审稿时长

13 weeks

期刊介绍： Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects. Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.