Modeling InGaAs/InAlAs Spads as a Part of Single-Photon Detectors to Predict Their Electrical Parameters

IF 0.7 4区 物理与天体物理 Q4 OPTICS
A. V. Losev, A. A. Filyaev, V. V. Zavodilenko, A. A. Gorbatsevich
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引用次数: 0

Abstract

We construct a model of InGaAs/InAlAs single-photon avalanche diodes in the T-CAD computing environment, in order to predict their electrical parameters, when they work as a part of single-photon detectors. The obtained results are applicable for optimizing the design of single-photon avalanche photodiodes for the use as sensitive elements in light detection devices. The main advantage of the developed model of InGaAs/InAlAs single-photon diodes is the fact that it can be integrated in the electrical control circuit of the single-photon detector to simulate the operation of the diode, which allows not only setting up the detector control system but also testing new circuit solutions.

InGaAs/InAlAs spad作为单光子探测器的一部分建模以预测其电学参数
我们在T-CAD计算环境中构建了InGaAs/InAlAs单光子雪崩二极管的模型,以预测它们作为单光子探测器的一部分时的电学参数。所得结果可用于优化设计单光子雪崩光电二极管作为光探测器件的敏感元件。所开发的InGaAs/InAlAs单光子二极管模型的主要优点是它可以集成在单光子探测器的电气控制电路中,以模拟二极管的工作,不仅可以建立探测器控制系统,还可以测试新的电路解决方案。
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来源期刊
CiteScore
1.50
自引率
22.20%
发文量
73
审稿时长
2 months
期刊介绍: The journal publishes original, high-quality articles that follow new developments in all areas of laser research, including: laser physics; laser interaction with matter; properties of laser beams; laser thermonuclear fusion; laser chemistry; quantum and nonlinear optics; optoelectronics; solid state, gas, liquid, chemical, and semiconductor lasers.
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