Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors

IF 9.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
R. Muñoz, E. López-Elvira, C. Munuera, F. Carrascoso, Y. Xie, O. Çakıroğlu, T. Pucher, S. Puebla, A. Castellanos-Gomez, M. García-Hernández
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Abstract

We report on outstanding photo-responsivity, R > 103 A/W, fast response (~0.1 s), and broadband sensitivity ranging from the UV to the NIR in two terminal graphene/MoS2 photodetectors. Our devices are based on the deterministic transfer of MoS2 on top of directly grown graphene on sapphire, and their performance outperforms previous similar photodetectors using large-scale grown graphene. Here we devise a protocol for the direct growth of transparent (transmittance, Tr > 90%), highly conductive (sheet resistance, R□ < 1 kΩ) uniform and continuous graphene films on sapphire at 700 °C by using plasma-assisted chemical vapor deposition (CVD) with C2H2/H2 gas mixtures. Our study demonstrates the successful use of plasma-assisted low-temperature CVD techniques to directly grow graphene on insulators for optoelectronic applications.

Abstract Image

Abstract Image

低T直接等离子体辅助石墨烯在蓝宝石上的生长及其在石墨烯/MoS2异质结构光电探测器中的集成
我们报告了两个终端石墨烯/MoS2 光电探测器出色的光响应率 R > 103 A/W、快速响应(约 0.1 秒)以及从紫外到近红外的宽带灵敏度。我们的器件基于在蓝宝石上直接生长的石墨烯顶部确定性地转移 MoS2,其性能优于以前使用大规模生长的石墨烯的类似光电探测器。在此,我们设计了一套方案,利用等离子体辅助化学气相沉积(CVD)技术和 C2H2/H2 混合气体,在 700 °C 温度下在蓝宝石上直接生长出透明(透光率,Tr > 90%)、高导电性(片状电阻,R□ < 1 kΩ)、均匀且连续的石墨烯薄膜。我们的研究表明,等离子体辅助低温化学气相沉积技术可成功地在绝缘体上直接生长石墨烯,用于光电应用。
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来源期刊
npj 2D Materials and Applications
npj 2D Materials and Applications Engineering-Mechanics of Materials
CiteScore
14.50
自引率
2.10%
发文量
80
审稿时长
15 weeks
期刊介绍: npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.
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