Study on Lifetime Modeling of IGBT Modules Considering Electric Frequency Influence Mechanism

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-06-22 DOI:10.1109/TDMR.2023.3288144

Wei Lai;Anbin Liu;Zhi Wang;Miaomiao Shangguan;Hui Li;Minyou Chen;Ran Yao;Yan Xiong

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引用次数: 0

Abstract

Affected by the randomness of the wind speed, the output electric frequency (0~20Hz) of the rotor-side converter does not match the thermal time constant (about 100ms) of IGBT modules, which causes the different junction temperature stress. It leads that it is difficult for the traditional lifetime model to reflect the influence of multi-time constant thermal load and result in inaccurate reliability evaluation. Aiming at the characteristics of wind turbine-side converters bearing thermal loads with multiple time constants, this paper studies the influence mechanism of electric frequency on the reliability of IGBT modules through a multi-physics simulation model and power cycling tests, and an improved lifetime model considering the influence of frequency parameters is proposed. Finally, an example analysis of the reliability evaluation of the DFIG rotor side converter is carried out. This paper is intended for the health management of converter systems and is supposed to be in service reliably.

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考虑电频率影响机理的IGBT模块寿命建模研究

受风速随机性的影响，转子侧变流器的输出电频率(0~20Hz)与IGBT模块的热时间常数(约100ms)不匹配，导致结温应力不同。这导致传统的寿命模型难以反映多时间恒定热负荷的影响，导致可靠性评估不准确。针对风电侧变流器承受多时间常数热负荷的特点，通过多物理场仿真模型和功率循环试验，研究了电频率对IGBT模块可靠性的影响机理，提出了考虑频率参数影响的改进寿命模型。最后，对DFIG转子侧变换器的可靠性评估进行了实例分析。本文旨在对变流器系统进行健康管理，保证系统的可靠运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.