Self-assembled N/O-doped carbon microflowers from benzimidazole-containing polyimides for supercapacitors

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mengdi Liu, Yunhua Lu, Miao Liu, Hongbin Zhao, Zhizhi Hu, Guoyong Xiao
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引用次数: 0

Abstract

Herein, a kind of flower-like polyimide (PI) particles are first prepared via a self-assembly method using 2-(4-aminophenyl)-5-aminobenzimidazole (APBIA) and pyromellitic dianhydride (PMDA) as monomers. Subsequently, the N/O-doped carbon microflowers are obtained through pyrolysis. When the polymer solution concentration is 40 mg mL−1, and the solvothermal time and temperature are 8 h and 200 °C, the resulting carbon sample demonstrates high O and N contents (3.67 % and 10.07 %, respectively), leading to a capacitance of 178.1 F g−1 at 0.5 A g−1. After further activation with HNO3, the optimized sample exhibits an enhanced specific capacitance (335.3 F g−1). Additionally, the symmetric coin SC cell constructed with ABPC-80-6-36 achieves a specific capacitance of 98.1 F g−1, along with an energy density of 13.63 Wh kg−1 at a power density of 250 W kg−1. Even after 15,000 charge-discharge cycles, the capacitance retention remains approximately 100 %, indicating its potential as a high-performance electrode material.
用含苯并咪唑聚酰亚胺制备的自组装N/ o掺杂碳微花用于超级电容器
本文首先以2-(4-氨基苯基)-5-氨基苯并咪唑(APBIA)和邻苯二酐(PMDA)为单体,通过自组装法制备了一种花状聚酰亚胺(PI)颗粒。随后,通过热解得到N/ o掺杂碳微花。当聚合物溶液浓度为40 mg mL−1,溶剂热时间和温度分别为8 h和200℃时,所得碳样品的O和N含量分别为3.67%和10.07%,在0.5 a g−1下的电容为178.1 F g−1。经HNO3进一步活化后,优化后的样品表现出增强的比电容(335.3 F g−1)。此外,用ABPC-80-6-36构建的对称硬币SC电池在功率密度为250 W kg - 1时,具有98.1 F g - 1的比电容和13.63 Wh kg - 1的能量密度。即使在15000次充放电循环后,电容保持率仍保持在100%左右,表明其作为高性能电极材料的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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