Structural, resistivity and magnetic properties of millimeter-sized HfAl3 single crystals grown from Al flux

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-09-19 DOI:10.1016/j.jcrysgro.2025.128344

Kexin Bi , Wansong He , Lewei Chen , Yunqing Shi , Junkun Yi , Jihai Yuan , Qingsong Liu , Haoyu He , Yadong Gu , Shaoliang Wang , Xiao Ren , Mingwei Ma , Genfu Chen , Zhian Ren

引用次数: 0

Abstract

HfAl₃ single crystals were successfully grown from Al flux for the first time. The largest as-grown plate-like crystals reached dimensions of 4 × 2 × 0.05 mm³. Comprehensive characterization including scanning electron microscopy, energy-dispersive spectroscopy, inductively coupled plasma atomic emission spectroscopy, and x-ray diffraction confirmed homogeneous chemical composition and phase purity. Magnetic measurements revealed weak diamagnetic behavior between 2 − 300 K, while electrical resistivity exhibited typical metallic conduction with a linear temperature dependence above 80 K. This work establishes a foundation for further investigation of the anisotropic physical properties of HfAl₃.

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Al助焊剂生长的毫米级HfAl3单晶的结构、电阻率和磁性能

首次在Al助熔剂中成功生长出HfAl3单晶。最大的片状晶体尺寸达到4 × 2 × 0.05 mm3。通过扫描电子显微镜、能量色散光谱、电感耦合等离子体原子发射光谱和x射线衍射等综合表征，确定了均匀的化学成分和相纯度。在2 ~ 300 K之间，磁性测量显示出弱的抗磁性行为，而在80 K以上，电阻率表现出典型的金属传导，与温度呈线性关系。该工作为进一步研究HfAl3的各向异性物理性质奠定了基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.