Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-29 DOI:10.1109/LED.2025.3585313

Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi

引用次数: 0

Abstract

Presents corrections to the paper, (Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields”).

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“面内磁场诱导自旋-轨道转矩记忆写入不对称性”的修正

对“面内磁场诱导的自旋-轨道转矩记忆的写入不对称性”进行了修正。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.