Single-Button-Enabled Split-Modulation Transistor for Bidirectional Response in Dynamic Detection

Abstract

The bidirectional response of a machine vision system is pivotal for the efficient processing of complex motion scenes. However, achieving a reconfigurable bidirectional modulation still suffers from complex configurations with cumbersome operation and high power consumption. Here, we propose a single-button-enabled bidirectional transistor based on WSe₂ homojunction with a split-modulation layer of ferroelectric CIPS and charge trapping, exhibiting user-friendly operation and low power consumption for motion signal detection. The single-button gate could effectively reconfigure the rectification ratio and photovoltaic current ranging from 10^–7 to 10⁴ and −526 pA (0.33 V) to 926 pA (−0.41 V), respectively, incorporating the nonvolatile and bidirectional modulation. Furthermore, energy-saving and highly sensitive motion detection is implemented at zero bias, and the recognition accuracy of characteristic information is up to 98.5%. This work introduces a straightforward and efficient neuromorphic device for moving object detection.