Moiré ferroelectricity modulates light emission from a semiconductor monolayer

Abstract

Semiconductor moiré superlattices, characterized by their periodic spatial light emission, unveil a new paradigm of engineered photonic materials. Here, we show that ferroelectric moiré domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe₂ monolayer. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe₂ monolayer. The excitons confined within the domains and at the domain walls are spectrally separated because of a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a functionality beyond other semiconductor moiré superlattices. Our findings chart an exciting pathway for integrating nanometer-scale moiré ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonics and metasurfaces.