The Electronic Properties and I–V Characteristics of Deformed SWCNT Field Effect Transistors

Abstract

An elastic mechanical deformation has been applied to a single walled carbon nanotube (SWCNT) in this research to investigate its electronic properties using the tight binding model. This work involves torsional and uniaxial deformation that change the energy spectrum of zigzag, armchair and chiral carbon nanotubes and thus their electronic transport properties. In this paper, we look at the I–V characteristics of a single-walled carbon nanotube field effect transistor (CNTFET) in ballistic conduction at room temperature. The effect of torsional and uniaxial deformation on the performance of carbon nanotube field effect transistors is examined.