Small-Signal Model of GaN-on-Si HEMTs Based on Improved Imperialist Competitive Algorithm

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Kairan Bian;Weiyuan Wang;Xiao Ma;Tianjiao Li;Hong Wang
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引用次数: 0

Abstract

We propose an improved imperialist competitive algorithm (I-ICA)-based extraction method for small-signal model of GaN HEMT on Si. The proposed algorithm introduces differential evolution and boundary processing in the empire assimilation process, which effectively improves the search ability and search speed. The experimental results show that the improved imperialistic competition algorithm greatly improves the traditional optimization algorithm, which falls into local optimum. In the frequency range from 0.1 to 9 GHz, the simulation results agree well with the measurements under different operating conditions, indicating the reliability of the model.
基于改进的帝国主义竞争算法的硅基氮化镓 HEMT 小信号模型
提出了一种改进的基于帝国主义竞争算法(I-ICA)的硅基GaN HEMT小信号模型提取方法。该算法在帝国同化过程中引入差分进化和边界处理,有效地提高了搜索能力和搜索速度。实验结果表明,改进的帝国竞争算法大大改善了传统优化算法陷入局部最优的问题。在0.1 ~ 9 GHz频率范围内,仿真结果与不同工况下的实测结果吻合较好,表明了模型的可靠性。
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