Enhancement of IR Absorption of Silicon by Its Doping with Sulfur Atoms

Abstract

The extension of the spectral absorption range of crystalline silicon to the near- and mid-IR region is possible by doping it using ion implantation and subsequent annealing methods. Pulsed laser annealing makes it possible to eliminate ion-induced defects, which leads to recrystallization of the crystal structure, and activation of impurities. The crystal structure of the obtained samples, as well as their chemical, optical, and electrical characteristics are analyzed comprehensively.