Realization of the SERS Effect in a Silicon Semiconductor Structure with Fano Resonance

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2025-04-02 DOI:10.3103/S1068335624601924

N. N. Melnik, E. V. Perevedentseva, V. V. Tregulov, G. N. Skoptsova, Yu. N. Gorbunova, D. S. Kostsov

引用次数: 0

Abstract

A method for obtaining active surface-enhanced Raman scattering (SERS) substrates with an enhancement factor of ~10⁴ is presented. It is shown that substrates with a more pronounced Fano resonance in a silicon porous structure obtained by thermal boron diffusion have a high enhancement factor.

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用范诺共振在硅半导体结构中实现SERS效应

提出了一种获得增强因子为~104的活性表面增强拉曼散射（SERS）衬底的方法。结果表明，通过硼热扩散获得的硅多孔结构中具有更明显的Fano共振的衬底具有较高的增强因子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.