Enhancement of the photoelectrochemical performance of bismuth vanadate (BiVO4) photoanode by building a W:BiVO4/Mo:BiVO4 Homojunction

IF 1.7 4区化学

Bulletin of the Korean Chemical Society Pub Date : 2025-01-27 DOI:10.1002/bkcs.12943

Ji Hyun Kim, Seung Hyeon Jeong, Aram Hong, Zhenhua Pan, Kenji Katayama, Woon Yong Sohn

引用次数: 0

Abstract

We fabricated a highly efficient bismuth vanadate (BiVO₄)-based photoanode by constructing a W:BiVO₄/Mo:BiVO₄ homojunction configuration. It was confirmed that, in the case of Type-II junction, the photocurrent density was drastically enhanced and the onset potential was cathodically shifted. The origins of the enhanced photo-electrochemical performance could be attributed to the improvement of the charge separation efficiency, which resulted from both the built-in electric field and Fermi level unpinning, achieved by the homojunction and Mo doping, respectively.

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来源期刊

Bulletin of the Korean Chemical Society Chemistry-General Chemistry

自引率

23.50%

发文量

182

期刊介绍： The Bulletin of the Korean Chemical Society is an official research journal of the Korean Chemical Society. It was founded in 1980 and reaches out to the chemical community worldwide. It is strictly peer-reviewed and welcomes Accounts, Communications, Articles, and Notes written in English. The scope of the journal covers all major areas of chemistry: analytical chemistry, electrochemistry, industrial chemistry, inorganic chemistry, life-science chemistry, macromolecular chemistry, organic synthesis, non-synthetic organic chemistry, physical chemistry, and materials chemistry.