Photosensitivity enhancement in Cu2O based visible light photodetector: the effect of Eu(III)

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-03-12 DOI:10.1007/s11082-025-08105-3

Ivan A. Svito, Evgeny Bondarenko, Eugene Streltsov, Anatoly I. Kulak, Alexander V. Mazanik

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Abstract

Cu₂O films were electrochemically deposited on FTO glasses, and the simplest solid-state structures were prepared by the formation of silver contact on the surface of Cu₂O film. Addition of europium nitrate to the electrodeposition electrolyte results in a few time increase of the responsivity of FTO/Cu₂O/Ag structures both in the photodiode (without application of an external bias voltage) and photoresistor (with an external bias voltage) operation modes. In particular, in the self-powered mode, the photodetector prepared with the addition of Eu(III) to the electrolyte demonstrates 4-fold increase in the ampere-watt responsivity reaching 6.7 mA/W at 589 nm. At an external bias of 2 V, the ampere-watt responsivity and specific detectivity under 525 nm illumination for the Eu-modified film-based photodetector are 87.2 A/W (18-fold increase) and 3.11∙10¹² cm∙Hz^0.5/W (6-fold increase), respectively. The increase in photosensitivity is explained by the suppression of charge carrier recombination in the films prepared with the addition of europium, which is confirmed by the photoluminescence spectroscopy.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.