Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs with Linear and Hexagonal Topologies

IF 4.6 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Emerging and Selected Topics in Power Electronics Pub Date : 2025-01-08 DOI:10.1109/jestpe.2025.3527366

Huan Wu, Houcai Luo, Jingping Zhang, Bofeng Zheng, Ruonan Wang, G.Q. Zhang, Xianping Chen

引用次数: 0

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线性和六边形拓扑SiC平面mosfet的短路特性和失效模式研究

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Emerging and Selected Topics in Power Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

12.50

自引率

9.10%

发文量

547

审稿时长

3 months

期刊介绍： The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.