Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow

Abstract

Transmission electron microscopy is used to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the influence of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. Mixed-dimensional nanostructures (0D/2D) are found. Energy-dispersive X-ray spectroscopy demonstrates that Bi acts as a surfactant and is not trapped by the growing layers.