Analyzing the Change in the Composition of a CdTe Surface upon Implanting \(O_{2}^{ + }\) Ions and Subsequent Annealing

Abstract

A CdTeO₃ film is obtained by implanting \({\text{O}}_{2}^{ + }\) ions into a single-crystal CdTe/Mo(111) film and annealing for 30 min at Т = 800 K. It is established that the valence band of the CdTeO₃ film reveals three maxima caused by the excitation of electrons from the 5s electrons of Cd, the 2p electrons of O, and the hybridized levels of 5s Cd + 2p O. Cd–Te–O compounds form in the near-surface layer during the implantation of \({\text{O}}_{2}^{ + }\) ions with E₀ ≥ 10 keV, producing a three-layer CdTe/CdTeO/CdTe nanosystem.