Synthesis of Gallium(II) Sulfide

Abstract

The synthesis of gallium(II) sulfide was carried out from elements in a closed volume using a two-temperature method. Passivation of the gallium surface in vacuum was observed up to temperatures of 1623 К. The controlled chemical reaction was carried out in a hydrogen atmosphere at a pressure of 1300–2600 Pa. Similar results were achieved in vacuum using photocatalysis with ultraviolet radiation at a wavelength of 240–320 nm with a radiant power of 24.6 W. In both cases, at a temperature of 1323–1373 К gallium(II) sulfide synthesis took no more than 30 min with a loading mass of 100 g. The Rietveld method was used to characterize crystalline gallium(II) sulfide by powder X-ray diffraction. The results of analysis showed that the product of the chemical reaction was a single-phase GaS. The proposed solution to the problem of gallium melt surface passivation for sulfur oligomers from the point of view of quantum electrodynamics made it possible to significantly reduce energy costs and increase the synthesis efficiency of extrapure gallium(II) sulfide for its further use in chalcogenide glasses production.