Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-04 DOI:10.1109/TED.2024.3494760

Zhi Jiang;Enpu Wang;Jun Ying;Chengchang Zhang;Jiajia Du;Guangyu Wang;Yu Pang

引用次数: 0

Abstract

Presents corrections to the paper, (Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”).

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.