Amorphous Copper Gallium Oxide Extended Gate Field-Effect Transistor pH Sensor

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2024-10-14 DOI:10.1109/JSEN.2024.3476452

You-En Dai;An-Ting Zheng;Jei-Li Hou;Ting-Jen Hsueh

引用次数: 0

Abstract

The structural characteristics and the sensitivity of copper gallium oxide (CGO) extended gate field-effect transistor (EGFET) pH sensors were investigated in this study. An amorphous CGO thin film was synthesized by co-sputtering Cu and Ga2O3 targets, ensuring uniform composition throughout the film. The voltage sensitivity was found to be 51 mV/pH with an excellent linearity of approximately 99.59%, and the current sensitivity was

$80~\mu $

$^{\text {1/2}}$

/pH with a linearity of around 99.1%. The sensor demonstrated good linearity and stability across a pH range from 2 to 10. The net hysteresis value of the sensor was approximately 0.003 V. These results indicate that CGO-based EGFETs are promising candidates for reliable and high-performance pH sensing.

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非晶铜镓氧化物扩展门场效应晶体管pH传感器

研究了氧化铜镓（CGO）扩展栅场效应晶体管（EGFET） pH传感器的结构特性和灵敏度。采用Cu和Ga2O3靶材共溅射法制备了CGO非晶薄膜，保证了薄膜的均匀组成。电压灵敏度为51 mV/pH，线性度约为99.59%；电流灵敏度为$80~\mu $ A $^{\text {1/2}}$ /pH，线性度约为99.1%。该传感器在2到10的pH范围内表现出良好的线性和稳定性。传感器的净迟滞值约为0.003 V。这些结果表明，基于cgo的egfet是可靠和高性能pH传感的有希望的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

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