In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2024-11-22 DOI:10.3103/S1068335624600748

I. P. Kazakov

引用次数: 0

Abstract

The formation of InGaAs/GaAs quantum dots by molecular beam epitaxy is studied under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, lowering the temperature of the formation of quantum dots by about 50°C.

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双界面活性剂对分子束外延形成 InGaAs/GaAs 量子点的影响的原位研究

在砷化镓衬底的不同温度下，研究了分子束外延法在生长表面Bi蒸汽流的影响下InGaAs/GaAs量子点的形成。结果表明，Bi 可作为表面活性剂，将量子点的形成温度降低约 50°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.