Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

Abstract

In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.