100–112-Gb/s 1.6-Vppd PAM-8 Transmitters With High-Swing 3 $+$ 1 Hybrid FFE Taps in 40-nm Technology

IF 4.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2024-11-14 DOI:10.1109/jssc.2024.3492061

Eunji Song, Jeonghyu Yang, Youngmin Oh, Seungwook Hong, Dongjun Lee, Sangwan Lee, Hyunwoo Im, Taeho Shin, Jaeduk Han

引用次数: 0

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采用 40 纳米技术的 100-112-Gb/s 1.6 Vppd PAM-8 发射器与高摆幅 3 $+$ 1 混合 FFE 分路器

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.