Spin–Orbit Torque Booster in an Antiferromagnet via Facilitating a Global Antiferromagnetic Order: A Route toward an Energy-Efficient Memory

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Hao-Kai Chang, Kuan-Yu Chi, Yu-Lon Lin, Yu-Hsien Lai, Yen-Lin Huang, Chi-Feng Pai, Chao-Yao Yang
{"title":"Spin–Orbit Torque Booster in an Antiferromagnet via Facilitating a Global Antiferromagnetic Order: A Route toward an Energy-Efficient Memory","authors":"Hao-Kai Chang, Kuan-Yu Chi, Yu-Lon Lin, Yu-Hsien Lai, Yen-Lin Huang, Chi-Feng Pai, Chao-Yao Yang","doi":"10.1021/acsami.4c15453","DOIUrl":null,"url":null,"abstract":"Spin transport and the associated spin torque effects in antiferromagnets (AFMs) are scientifically interesting but have remained elusive due to the varied observations of spin transport in AFMs. This study revisits the role of a global Néel order in nickel oxide (NiO) facilitated through a spin–orbit torque (SOT) and examines the enhanced SOT efficiency in a heavy metal (W)/AFM (NiO)/ferromagnet (FM, CoFeB) trilayer with varying NiO thicknesses ranging from 1 to 5 nm. At the as-grown state, the Néel order of NiO is randomly oriented due to the polycrystalline nature of the film structure, leading to increased spin absorption and blocking spin transport from the adjacent W layer. When the spin current amplitude exceeds a threshold value, SOT enables reorientation of the Néel order in NiO to an equilibrium state, forming a global Néel order aligned with the applied current. This long-range Néel order reduces spin absorption and enhances spin transport through NiO, hence boosting the SOT efficiency in the adjacent CoFeB layer. X-ray magnetic linear dichroism spectroscopy and rewritable Néel order reorientation experiments in a device with orthogonal geometry confirmed the strong correlation between the global Néel order facilitation and the boosted SOT efficiency, which is enhanced larger than 4-fold for both damping- and field-like torques in the trilayer with 5 nm NiO. This study not only reveals the strong correlation between globally facilitated Néel order and spin transport in NiO but also offers a promising manner to promote AFM-based SOT devices toward energy-efficient computing technology.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c15453","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Spin transport and the associated spin torque effects in antiferromagnets (AFMs) are scientifically interesting but have remained elusive due to the varied observations of spin transport in AFMs. This study revisits the role of a global Néel order in nickel oxide (NiO) facilitated through a spin–orbit torque (SOT) and examines the enhanced SOT efficiency in a heavy metal (W)/AFM (NiO)/ferromagnet (FM, CoFeB) trilayer with varying NiO thicknesses ranging from 1 to 5 nm. At the as-grown state, the Néel order of NiO is randomly oriented due to the polycrystalline nature of the film structure, leading to increased spin absorption and blocking spin transport from the adjacent W layer. When the spin current amplitude exceeds a threshold value, SOT enables reorientation of the Néel order in NiO to an equilibrium state, forming a global Néel order aligned with the applied current. This long-range Néel order reduces spin absorption and enhances spin transport through NiO, hence boosting the SOT efficiency in the adjacent CoFeB layer. X-ray magnetic linear dichroism spectroscopy and rewritable Néel order reorientation experiments in a device with orthogonal geometry confirmed the strong correlation between the global Néel order facilitation and the boosted SOT efficiency, which is enhanced larger than 4-fold for both damping- and field-like torques in the trilayer with 5 nm NiO. This study not only reveals the strong correlation between globally facilitated Néel order and spin transport in NiO but also offers a promising manner to promote AFM-based SOT devices toward energy-efficient computing technology.

Abstract Image

通过促进全局反铁磁秩序在反铁磁体中增强自旋轨道转矩:实现高能效存储器的途径
反铁磁体(AFMs)中的自旋传输和相关的自旋转矩效应具有科学意义,但由于对 AFMs 中自旋传输的观察结果各不相同,因此一直难以捉摸。本研究重新审视了氧化镍(NiO)中通过自旋轨道力矩(SOT)促进的全局奈尔有序的作用,并考察了重金属(W)/反铁磁体(NiO)/铁磁体(FM,CoFeB)三层(NiO 厚度从 1 纳米到 5 纳米不等)中增强的 SOT 效率。由于薄膜结构的多晶性质,NiO 的奈尔阶是随机取向的,这导致自旋吸收增加,并阻碍了相邻 W 层的自旋传输。当自旋电流振幅超过阈值时,SOT 使 NiO 中的奈尔阶重新定向到平衡状态,形成与外加电流对齐的全局奈尔阶。这种长程奈尔阶减少了自旋吸收,增强了通过氧化镍的自旋传输,从而提高了相邻 CoFeB 层的 SOT 效率。在具有正交几何结构的器件中进行的 X 射线磁性线性二色性光谱分析和可重写奈尔阶重定向实验证实了全局奈尔阶促进与提高的 SOT 效率之间的密切联系,在具有 5 nm NiO 的三层中,对于阻尼和场样转矩,SOT 效率提高了 4 倍以上。这项研究不仅揭示了镍氧化物中全局促进的奈尔有序与自旋传输之间的密切联系,而且为推动基于原子力显微镜的 SOT 器件实现高能效计算技术提供了一种可行的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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