Pressure-Dependent Shape and Edge Configurations of MoS2 by Kinetic Monte Carlo Simulation

IF 15.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Yoonbeen Kang, Rakwoo Chang* and Sang-Yong Ju*, 
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Abstract

Understanding the influence of precursor pressures is crucial for optimizing the properties of MoS2 grown through the chemical vapor deposition (CVD) process. In this study, we use kinetic Monte Carlo (KMC) simulations to investigate how varying the pressures of molybdenum (PMo) and sulfur (PS) impacts the structural properties of MoS2, such as grain shape and edge configurations. The simulations differentiate three distinct regimes─growth, steady-state, and etching─each defined by specific PMo, PS, and the most probable atomic sites for filling or etching. We further explore how these regimes influence the atomic configuration of MoS2, particularly the formation of different edge structures like sulfur zigzag (ZZS), molybdenum zigzag (ZZMo), and their respective derivatives. A pressure diagram based on the equations of state and most probable atomic sites was constructed for each regime and validated by comparing predicted ZZ-derived edges to experimental observations. Additionally, the study examines the impact of etching on various line defects, providing insights into the evolution of the MoS2 edges during the CVD process. These findings underscore the importance of controlling both growth and cessation phases in the CVD process to customize edge configurations, with significant implications for chemical functionalization, catalysis, and the electronic properties of transition metal dichalcogenides.

Abstract Image

通过动力学蒙特卡洛模拟研究 MoS2 随压力变化的形状和边缘配置
了解前驱体压力的影响对于优化通过化学气相沉积(CVD)工艺生长的 MoS2 的特性至关重要。在本研究中,我们使用动力学蒙特卡罗(KMC)模拟来研究改变钼(PMo)和硫(PS)的压力如何影响 MoS2 的结构特性,如晶粒形状和边缘配置。模拟区分了三种不同的状态--生长、稳态和蚀刻--每种状态都由特定的 PMo、PS 以及最有可能进行填充或蚀刻的原子位点所定义。我们进一步探讨了这些状态如何影响 MoS2 的原子构型,尤其是不同边缘结构的形成,如 "之 "字形硫(ZZS)、"之 "字形钼(ZZMo)及其各自的衍生物。根据状态方程和最可能的原子位点,为每种机制构建了压力图,并通过将预测的 ZZ 衍生边缘与实验观察结果进行比较来验证。此外,该研究还考察了蚀刻对各种线缺陷的影响,从而深入了解了 CVD 过程中 MoS2 边缘的演变。这些发现强调了在 CVD 过程中控制生长和停止阶段以定制边缘配置的重要性,对化学功能化、催化和过渡金属二钙化物的电子特性具有重要意义。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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